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GaN heterostructure.

Z. Dong, J. Wang, C. Wen, S. Liu, R. Gong, M. Yu, Y. Hao, F. Xu, B. Shen, и Y. Wang. Microelectron. Reliab., 52 (2): 434-438 (2012)

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Yilong Cao

Wenjin Hao

Xiaofei Hao

Jin Hao

Jun Hao

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High temperature induced failure in Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructure.Z. Dong, J. Wang, C. Wen, S. Liu, R. Gong, M. Yu, Y. Hao, F. Xu, B. Shen, и Y. Wang. Microelectron. Reliab., 52 (2): 434-438 (2012)High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer.Y. Li, R. Yin, M. Tao, Y. Hao, C. Wen, M. Wang, J. Zhang, X. Yang, и B. Shen. ICICDT, стр. 1-3. IEEE, (2019)Design and fabrication of a mems capacitive accelerometer based on double-device-layers SOI wafer.Q. Hu, C. Gao, Y. Hao, D. Zhang, G. Yan, и Y. Zhang. NEMS, стр. 1036-1039. IEEE, (2010)High temperature pressure sensor using a thermostable electrode.G. Liu, W. Cui, H. Hu, F. Zhang, Y. Zhang, C. Gao, и Y. Hao. NEMS, стр. 201-204. IEEE, (2015)Modeling and simulation development of electron beam resist based on cellular automata.L. Li, S. Long, C. Wang, W. Wu, Y. Hao, и M. Liu. Microelectron. J., 37 (4): 317-320 (2006)Design and simulation of MEMS thermal and vibration isolator based on PDMS beam arrays.K. Xu, N. Zhu, S. Cao, W. Su, W. Zhang, и Y. Hao. NEMS, стр. 213-216. IEEE, (2016)Design of a graphene capacitive pressure sensor for ultra-low pressure detection.Y. Zhang, Y. Gui, F. Meng, C. Gao, и Y. Hao. NEMS, стр. 192-195. IEEE, (2016)Second order design of multiclass kernel machines.Y. Hao, K. Tyagi, R. Rawat, и M. Manry. IJCNN, стр. 3233-3240. IEEE, (2016)Improvement of transient response for drive loop of microgyroscope using 2-DOF PID controller.J. Cui, Z. Guo, Z. Yang, Y. Hao, и G. Yan. NEMS, стр. 281-284. IEEE, (2011)Anemometer for detection of very low speed air flow with three-dimensional directionality.Z. Luo, Z. Li, C. Gao, Y. Hao, и Y. Jin. NEMS, стр. 615-618. IEEE, (2017)

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