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Disambiguation of ""Bulaeva","

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ON APPROACH OF ESTIMATION TIME SCALES OF RELAXATION OF CONCENTRATION OF CHARGE CARRIERS IN HIGH-DOPED SEMICONDUCTOR

, and . International Journal of Information Technology, Modeling and Computing (IJITMC), 4 (3): 9 (August 2016)
DOI: 10.5121/ijitmc.2016.4301

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ON APPROACH OF ESTIMATION TIME SCALES OF RELAXATION OF CONCENTRATION OF CHARGE CARRIERS IN HIGH-DOPED SEMICONDUCTOR, and . International Journal of Information Technology, Modeling and Computing (IJITMC), 4 (3): 9 (August 2016)ON ESTIMATION OF TIME SCALES OF MASS TRANSPORT IN INHOMOGENOUS MATERIAL, and . International Journal of Information Technology, Modeling and Computing (IJITMC), 4 (4): 10 (November 2016)ON MODIFICATION OF PROPERTIES OF P-N-JUNCTIONS DURING OVERGROWTH, and . International Journal of Information Technology, Modeling and Computing (IJITMC), 4 (2): 20 (May 2016)ON OPTIMIZATION OF MANUFACTURING PLANAR DOUBLE-BASE HETEROTRANSISTORS TO DECREASE THEIR DIMENSIONS, and . The International Journal of Applied Control, Electrical and Electronics Engineering, 3 (4): 12 (November 2015)ON APPROACH TO ANALYZE NONLINEAR MODEL OF MASS AND HEAT TRANSPORT DURING GAS PHASE EPITAXY. A POSSIBILITY TO IMPROVE PROPERTIES OF FILMS, and . International Journal on Organic Electronics (IJOE), 6 (4): 12 (October 2017)Optimization of Dopant Diffusion and Ion Implantation to Increase Integration Rate of Field-Effect Heterotransistors. An Ap-Proach to Simplify Construction of the Heterotransistors, and . International Journal of Recent Advances in Physics (IJRAP), 4 (1): 12 (February 2015)INFLUENCE OF OVERLAYERS ON DEPTH OF IMPLANTED-HETEROJUNCTION RECTIFIERS, and . International Journal of Information Technology, Modeling and Computing (IJITMC), 4 (1): 15 (February 2016)ANALYSIS OF MANUFACTURING OF VOLTAGE RESTORE TO INCREASE DENSITY OF ELEMENTS OF THE CIRCUIT, and . International Journal on Organic Electronics (IJOE), 5 (1/2/3/4): 19 (October 2016)ON APPROACH TO DECREASE DIMENSIONS OF FIELD-EFFECT TRANSISTORS FRAMEWORK ELEMENT OF SRAM WITH INCREASING THEIR DIMENSIONS, and . International Journal on Foundations of Computer Science & Technology (IJFCST), 6 (4): 12 (July 2016)Modeling of Redistribution of Infused Dopant in a Multilayer Structure Dopant Under Influence of Variation of Pressure of Vapor of the Dopant, and . Applied Mathematics and Sciences: An International Journal (MathSJ), 1 (2): 53-64 (August 2014)