Optimization of Dopant Diffusion and Ion Implantation to Increase Integration Rate of Field-Effect Heterotransistors. An Ap-Proach to Simplify Construction of the Heterotransistors
In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach
based on manufacturing field-effect transistors in heterostructures and optimization of technological
processes. At the same time we consider possibility to simplify their constructions.
Please log in to take part in the discussion (add own reviews or comments).
Cite this publication
More citation styles
- please select -
%0 Journal Article
%1 noauthororeditor
%A Pankratov, E.L.
%A Bulaeva, E.A.
%D 2015
%J International Journal of Recent Advances in Physics (IJRAP)
%K Field-effect analytical construction heterotransistors increasing integration manufacturing modelling of optimization process rate simplification technological transistors
%N 1
%P 12
%R https://wireilla.com/physics/ijrap/papers/4115ijrap03.pdf
%T Optimization of Dopant Diffusion and Ion Implantation to Increase Integration Rate of Field-Effect Heterotransistors. An Ap-Proach to Simplify Construction of the Heterotransistors
%U https://wireilla.com/physics/ijrap/papers/4115ijrap03.pdf
%V 4
%X In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach
based on manufacturing field-effect transistors in heterostructures and optimization of technological
processes. At the same time we consider possibility to simplify their constructions.
@article{noauthororeditor,
abstract = {In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach
based on manufacturing field-effect transistors in heterostructures and optimization of technological
processes. At the same time we consider possibility to simplify their constructions. },
added-at = {2018-07-26T04:41:44.000+0200},
author = {Pankratov, E.L. and Bulaeva, E.A.},
biburl = {https://www.bibsonomy.org/bibtex/2342d9f150a1f651324e9c832020e1849/johnkenadi1985},
doi = {https://wireilla.com/physics/ijrap/papers/4115ijrap03.pdf},
interhash = {24d971a82ec95f45de71a07b95160fe4},
intrahash = {342d9f150a1f651324e9c832020e1849},
issn = {2201-1056},
journal = {International Journal of Recent Advances in Physics (IJRAP) },
keywords = {Field-effect analytical construction heterotransistors increasing integration manufacturing modelling of optimization process rate simplification technological transistors},
language = {English},
month = {February},
number = 1,
pages = 12,
timestamp = {2018-07-26T04:41:44.000+0200},
title = {Optimization of Dopant Diffusion and Ion Implantation to Increase Integration Rate of Field-Effect Heterotransistors. An Ap-Proach to Simplify Construction of the Heterotransistors},
url = {https://wireilla.com/physics/ijrap/papers/4115ijrap03.pdf},
volume = 4,
year = 2015
}