Author of the publication

A Passive Voltage-Balancing Method for Series-Connected SiC MOSFETs in Pulse Generator Based on Snubber Circuit.

, , , , and . IEEE Trans. Ind. Electron., 71 (7): 7030-7041 (2024)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Triple-rail MOS current mode logic for high-speed self-timed pipeline applications., , , , , and . ISCAS, IEEE, (2006)A Passive Voltage-Balancing Method for Series-Connected SiC MOSFETs in Pulse Generator Based on Snubber Circuit., , , , and . IEEE Trans. Ind. Electron., 71 (7): 7030-7041 (2024)Semantic Information Supplementary Pyramid Network for Dynamic Scene Deblurring., , , , , , and . IEEE Access, (2020)Online Open-Circuit Fault Diagnosis for Neutral Point Clamped Inverter Based on an Improved Convolutional Neural Network and Sample Amplification Method Under Varying Operating Conditions., , , , and . IEEE Trans. Instrum. Meas., (2024)CogTaskonomy: Cognitively Inspired Task Taxonomy Is Beneficial to Transfer Learning in NLP., , and . ACL (1), page 904-920. Association for Computational Linguistics, (2022)Modeling of High-Voltage Nonpunch-Through PIN Diode Snappy Reverse Recovery and Its Optimal Suppression Method Based on RC Snubber Circuit., , , , and . IEEE Trans. Ind. Electron., 69 (6): 5700-5712 (2022)Characterization on the thermal field inside IGBT cells during switching based on TCAD modeling and Thermoreflectance imaging., , , , and . Microelectron. J., (December 2023)Temperature monitoring inside IGBT modules at forward bias from the cross section and its finite element analysis., , , and . Microelectron. Reliab., (2018)Fatigue Mechanism of Die-Attach Joints in IGBTs Under Low-Amplitude Temperature Swings Based on 3D Electro-Thermal-Mechanical FE Simulations., , , , , and . IEEE Trans. Ind. Electron., 68 (4): 3033-3043 (2021)An Improved Equivalent Circuit Model of SiC MOSFET and Its Switching Behavior Predicting Method., , , , and . IEEE Trans. Ind. Electron., 69 (9): 9462-9471 (2022)