Due to its high absorption of solar energy and low heat emission, copper oxide has been used in a growing number of recent investigations. The crystal structure of CuO is monoclinic at 99.54°. There are four oxygen atoms firmly bonded to each copper atom. The results show a decrease in Voc, Jsc, and η with increasing interfacial defect density, where Voc decreases from 0.652 V at a defect density of 1010cm-2 to 0.648 V at a defect density of 1014cm-2, Jsc decreases from 18.31 mA/cm2 at a defect density of 1010cm-2 to 13.20. mA/cm2 at the efficiency defect density of 1014cm-2, F.F increases from 37.69% at the defect density of 1010cm-2 to 46.87% at the defect density of 1014cm-2, η decreases from 4.51% at the defect density of 1010cm-2 to 4.01% at the defect density of 1014cm-2 As the cross-section of carrier capture increases, the length of propagation will decrease, and thus the durability of the carriers will decrease. The results, are a decrease in Voc with an increase in the cross-section ranges from 0.791 V to 0.776 V, Jsc from 27.69 (mA/cm2) to 20.60 (mA/cm2), F.F from 84.59% to 70.21%, and η from 18.53% to 11.24%.
%0 Journal Article
%1 gulsan_t_kamal_2024_10951833
%A Kamal, Gulsan. T.
%A Hassan, Nadim. K.
%A Hammood, Abdulrahman. R.
%A Ali, Abdul Kareem Dahash
%D 2024
%J Global Journal of Engineering and Technology Advances
%K Interfacial defects
%N 3
%P 082–089
%R 10.30574/gjeta.2024.18.3.0039
%T Effects of interfacial defects of the p-CuO/n-TiO2 on the CuO/CdS/TiO2 solar cell performance
%U https://gjeta.com/content/effects-interfacial-defects-p-cuon-tio2-cuocdstio2-solar-cell-performance
%V 18
%X Due to its high absorption of solar energy and low heat emission, copper oxide has been used in a growing number of recent investigations. The crystal structure of CuO is monoclinic at 99.54°. There are four oxygen atoms firmly bonded to each copper atom. The results show a decrease in Voc, Jsc, and η with increasing interfacial defect density, where Voc decreases from 0.652 V at a defect density of 1010cm-2 to 0.648 V at a defect density of 1014cm-2, Jsc decreases from 18.31 mA/cm2 at a defect density of 1010cm-2 to 13.20. mA/cm2 at the efficiency defect density of 1014cm-2, F.F increases from 37.69% at the defect density of 1010cm-2 to 46.87% at the defect density of 1014cm-2, η decreases from 4.51% at the defect density of 1010cm-2 to 4.01% at the defect density of 1014cm-2 As the cross-section of carrier capture increases, the length of propagation will decrease, and thus the durability of the carriers will decrease. The results, are a decrease in Voc with an increase in the cross-section ranges from 0.791 V to 0.776 V, Jsc from 27.69 (mA/cm2) to 20.60 (mA/cm2), F.F from 84.59% to 70.21%, and η from 18.53% to 11.24%.
@article{gulsan_t_kamal_2024_10951833,
abstract = {Due to its high absorption of solar energy and low heat emission, copper oxide has been used in a growing number of recent investigations. The crystal structure of CuO is monoclinic at 99.54°. There are four oxygen atoms firmly bonded to each copper atom. The results show a decrease in Voc, Jsc, and η with increasing interfacial defect density, where Voc decreases from 0.652 V at a defect density of 1010cm-2 to 0.648 V at a defect density of 1014cm-2, Jsc decreases from 18.31 mA/cm2 at a defect density of 1010cm-2 to 13.20. mA/cm2 at the efficiency defect density of 1014cm-2, F.F increases from 37.69% at the defect density of 1010cm-2 to 46.87% at the defect density of 1014cm-2, η decreases from 4.51% at the defect density of 1010cm-2 to 4.01% at the defect density of 1014cm-2 As the cross-section of carrier capture increases, the length of propagation will decrease, and thus the durability of the carriers will decrease. The results, are a decrease in Voc with an increase in the cross-section ranges from 0.791 V to 0.776 V, Jsc from 27.69 (mA/cm2) to 20.60 (mA/cm2), F.F from 84.59% to 70.21%, and η from 18.53% to 11.24%.},
added-at = {2024-04-10T13:03:28.000+0200},
author = {Kamal, Gulsan. T. and Hassan, Nadim. K. and Hammood, Abdulrahman. R. and Ali, Abdul Kareem Dahash},
biburl = {https://www.bibsonomy.org/bibtex/244d67e3028d0335086d4070013b764cc/gjetajournal},
doi = {10.30574/gjeta.2024.18.3.0039},
interhash = {53b30c29741fe3694cb5f24dadb92e73},
intrahash = {44d67e3028d0335086d4070013b764cc},
issn = {2582-5003},
journal = {{Global Journal of Engineering and Technology Advances}},
keywords = {Interfacial defects},
month = apr,
number = 3,
pages = {082–089},
timestamp = {2024-04-10T13:03:28.000+0200},
title = {Effects of interfacial defects of the p-CuO/n-TiO2 on the CuO/CdS/TiO2 solar cell performance},
url = {https://gjeta.com/content/effects-interfacial-defects-p-cuon-tio2-cuocdstio2-solar-cell-performance},
volume = 18,
year = 2024
}