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Effects of interfacial defects of the p-CuO/n-TiO2 on the CuO/CdS/TiO2 solar cell performance
Global Journal of Engineering and Technology Advances, 18 (3): 082–089 (апреля 2024)
DOI: 10.30574/gjeta.2024.18.3.0039
Аннотация
Due to its high absorption of solar energy and low heat emission, copper oxide has been used in a growing number of recent investigations. The crystal structure of CuO is monoclinic at 99.54°. There are four oxygen atoms firmly bonded to each copper atom. The results show a decrease in Voc, Jsc, and η with increasing interfacial defect density, where Voc decreases from 0.652 V at a defect density of 1010cm-2 to 0.648 V at a defect density of 1014cm-2, Jsc decreases from 18.31 mA/cm2 at a defect density of 1010cm-2 to 13.20. mA/cm2 at the efficiency defect density of 1014cm-2, F.F increases from 37.69% at the defect density of 1010cm-2 to 46.87% at the defect density of 1014cm-2, η decreases from 4.51% at the defect density of 1010cm-2 to 4.01% at the defect density of 1014cm-2 As the cross-section of carrier capture increases, the length of propagation will decrease, and thus the durability of the carriers will decrease. The results, are a decrease in Voc with an increase in the cross-section ranges from 0.791 V to 0.776 V, Jsc from 27.69 (mA/cm2) to 20.60 (mA/cm2), F.F from 84.59% to 70.21%, and η from 18.53% to 11.24%.
