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Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields., , , , , , , and . Microelectron. Reliab., 48 (8-9): 1370-1374 (2008)Charge Trapping in GaN Power Transistors: Challenges and Perspectives., , , , , , , , , and 1 other author(s). BCICTS, page 1-4. IEEE, (2021)Modeling of Substrate Noise Injected by Digital Libraries., , , , , , , and . ISQED, page 488-492. IEEE Computer Society, (2001)Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences., , , , , , , , , and 4 other author(s). ESSDERC, page 381-384. IEEE, (2014)Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs., , , , , , , and . Microelectron. Reliab., 53 (9-11): 1461-1465 (2013)"Hot-plugging" of LED modules: Electrical characterization and device degradation., , , , , , and . Microelectron. Reliab., 53 (9-11): 1524-1528 (2013)Traps localization and analysis in GaN HEMTs., , , , and . Microelectron. Reliab., 54 (9-10): 2222-2226 (2014)Continuous time-domain RF waveforms monitoring under overdrive stress condition of AlGaN/GaN HEMTs., , , , , , and . Microelectron. Reliab., (2016)Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications., , , , , , , , and . Microelectron. Reliab., 54 (9-10): 2237-2241 (2014)Long-term degradation mechanisms of mid-power LEDs for lighting applications., , , , , and . Microelectron. Reliab., 55 (9-10): 1754-1758 (2015)