%0 Journal Article %1 vanloon2023coulomb %A van Loon, Erik G. C. P. %A Schüler, Malte %A Springer, Daniel %A Sangiovanni, Giorgio %A Tomczak, Jan M. %A Wehling, Tim O. %D 2023 %J NPJ 2D Mater. Appl. %K a b %N 1 %P 47-- %R 10.1038/s41699-023-00408-x %T Coulomb engineering of two-dimensional Mott materials %U https://doi.org/10.1038/s41699-023-00408-x %V 7 %X Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally.

@article{vanloon2023coulomb, abstract = {Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally.}, added-at = {2023-11-22T18:24:43.000+0100}, author = {van Loon, Erik G. C. P. and Schüler, Malte and Springer, Daniel and Sangiovanni, Giorgio and Tomczak, Jan M. and Wehling, Tim O.}, biburl = {https://www.bibsonomy.org/bibtex/289776bd6e9a80e06d7cb720a3b885c28/ctqmat}, day = 06, doi = {10.1038/s41699-023-00408-x}, interhash = {f978712db51188e3b5762f3272e25e52}, intrahash = {89776bd6e9a80e06d7cb720a3b885c28}, issn = {23977132}, journal = {NPJ 2D Mater. Appl.}, keywords = {a b}, month = {07}, number = 1, pages = {47--}, refid = {van Loon2023}, timestamp = {2023-11-22T18:24:43.000+0100}, title = {Coulomb engineering of two-dimensional Mott materials}, url = {https://doi.org/10.1038/s41699-023-00408-x}, volume = 7, year = 2023 }