%0 Journal Article %1 hain2014excitation %A Hain, T. C. %A Fuchs, F %A Soltamov, V. A. %A Baranov, P. G. %A Astakhov, G. V. %A Hertel, T %A Dyakonov, V %B Journal of Applied Physics %D 2014 %I American Institute of Physics %J Journal of Applied Physics %K PL SiC myown %N 13 %P 133508-- %R 10.1063/1.4870456 %T Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide %U https://doi.org/10.1063/1.4870456 %V 115 %X We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect concentration is va...

@article{hain2014excitation, abstract = {We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect concentration is va...}, added-at = {2021-01-13T15:03:14.000+0100}, author = {Hain, T. C. and Fuchs, F and Soltamov, V. A. and Baranov, P. G. and Astakhov, G. V. and Hertel, T and Dyakonov, V}, biburl = {https://www.bibsonomy.org/bibtex/218a2aacb234177a6767c217f66def7b5/hertel-group}, booktitle = {Journal of Applied Physics}, comment = {doi: 10.1063/1.4870456}, description = {Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide: Journal of Applied Physics: Vol 115, No 13}, doi = {10.1063/1.4870456}, interhash = {9c3265615d4783ab03ac202a582b8bdd}, intrahash = {18a2aacb234177a6767c217f66def7b5}, issn = {00218979}, journal = {Journal of Applied Physics}, keywords = {PL SiC myown}, month = apr, number = 13, pages = {133508--}, publisher = {American Institute of Physics}, timestamp = {2021-01-27T09:12:10.000+0100}, title = {Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide}, url = {https://doi.org/10.1063/1.4870456}, volume = 115, year = 2014 }