%0 Journal Article %1 noauthororeditor %A Hla, Thu Rein Ye Yint Win | Tin Tin %D 2019 %J International Journal of Trend in Scientific Research and Development %K & Band Bandgap Communication Computer-based Current Electronics Engineering Temperature Voltage design effect simulation structure %N 5 %P 996-1000 %R https://doi.org/10.31142/ijtsrd26542 %T Simulation and Analysis of III V Characteristic and Bandgap Design for Heterojunction Laser Diode %U https://www.ijtsrd.com/engineering/electronics-and-communication-engineering/26542/simulation-and-analysis-of-iii-v-characteristic-and-bandgap-design-for-heterojunction-laser-diode/thu-rein-ye-yint-win %V 3 %X This research is the analysis of computer based simulation design for the semiconductor laser diode. The paper is emphasized by analyzing the band structure and voltage current characteristics of AlGaAs GaAs for the laser diode. In this paper bandgap variation temperature dependence voltage current V I band diagram of the p n junction for laser diode are discussed briefly. On the other hand this paper is emphasized band structure design and voltage current calculation using the mathematical model. The AlGaAs GaAs device technology is used for high speed optical communication. Thu Rein Ye Yint Win | Tin Tin Hla "Simulation and Analysis of III-V Characteristic and Bandgap Design for Heterojunction Laser Diode" Published in International Journal of Trend in Scientific Research and Development (ijtsrd) ISSN: 2456-6470 Volume-3 | Issue-5 August 2019 URL: https://www.ijtsrd.com/papers/ijtsrd26542.pdfPaper URL: https://www.ijtsrd.com/engineering/electronics-and-communication-engineering/26542/simulation-and-analysis-of-iii-v-characteristic-and-bandgap-design-for-heterojunction-laser-diode/thu-rein-ye-yint-win

@article{noauthororeditor, abstract = {This research is the analysis of computer based simulation design for the semiconductor laser diode. The paper is emphasized by analyzing the band structure and voltage current characteristics of AlGaAs GaAs for the laser diode. In this paper bandgap variation temperature dependence voltage current V I band diagram of the p n junction for laser diode are discussed briefly. On the other hand this paper is emphasized band structure design and voltage current calculation using the mathematical model. The AlGaAs GaAs device technology is used for high speed optical communication. Thu Rein Ye Yint Win | Tin Tin Hla "Simulation and Analysis of III-V Characteristic and Bandgap Design for Heterojunction Laser Diode" Published in International Journal of Trend in Scientific Research and Development (ijtsrd) ISSN: 2456-6470 Volume-3 | Issue-5 August 2019 URL: https://www.ijtsrd.com/papers/ijtsrd26542.pdfPaper URL: https://www.ijtsrd.com/engineering/electronics-and-communication-engineering/26542/simulation-and-analysis-of-iii-v-characteristic-and-bandgap-design-for-heterojunction-laser-diode/thu-rein-ye-yint-win }, added-at = {2019-09-12T08:07:52.000+0200}, author = {Hla, Thu Rein Ye Yint Win | Tin Tin}, biburl = {https://www.bibsonomy.org/bibtex/2a843f5af2240f84b0d62bbf80cbda8b9/ijtsrd}, doi = {https://doi.org/10.31142/ijtsrd26542}, interhash = {95f36dda2779cb44429450ee2163a2eb}, intrahash = {a843f5af2240f84b0d62bbf80cbda8b9}, issn = {2456-6470}, journal = {International Journal of Trend in Scientific Research and Development}, keywords = {& Band Bandgap Communication Computer-based Current Electronics Engineering Temperature Voltage design effect simulation structure}, language = {English}, month = aug, number = 5, pages = {996-1000}, timestamp = {2019-09-12T08:07:52.000+0200}, title = {Simulation and Analysis of III V Characteristic and Bandgap Design for Heterojunction Laser Diode }, url = {https://www.ijtsrd.com/engineering/electronics-and-communication-engineering/26542/simulation-and-analysis-of-iii-v-characteristic-and-bandgap-design-for-heterojunction-laser-diode/thu-rein-ye-yint-win}, volume = 3, year = 2019 }