Article,
Nature of the metallic and in-gap states in Ni-doped SrTiO$_3$
APL Materials, 12 (1): 011118 (Jan 22, 2024)
DOI: 10.1063/5.0183140
Abstract
Epitaxial thin films of SrTiO3(100) doped with 6% and 12% Ni are studied with resonant angle-resolved photoelectron spectroscopy at the Ti and Ni L2,3-edges. We find that the Ni doping shifts the valence band of n-doped pristine SrTiO3 toward the Fermi level (in the direction of p-doping) and reducing the bandgap. In the Ti t2g-derived mobile electron system (MES), the Ni doping depopulates the out-of-plane dxz/yz-derived bands, transforming the MES to two-dimensional and progressively reduces the electron density embedded in the in-plane dxy-derived bands as reflected in their Fermi momentum. Furthermore, the Ti and Ni L2,3-edge resonant photoemission is used to identify the Ni 3d impurity state in the vicinity of the valence-band maximum and decipher the full spectrum of the in-gap states originating from the Ni atoms, Ti atoms, and from their hybridized orbitals. Our experimental information about the dependence of the valence bands, MES, and in-gap states in Ni-doped SrTiO3 may help the development of this material toward its device applications associated with the reduced optical bandgap.
