%0 Journal Article %1 WOS:000176520700034 %A Ferreira, EC %A da Costa, JAP %A Freire, JAK %A Farias, GA %A Freire, VN %C PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS %D 2002 %I ELSEVIER SCIENCE BV %J APPLIED SURFACE SCIENCE %K binding effects} energy; exciton; interface well; {quantum %N 1-4 %P 191-194 %R 10.1016/S0169-4332(01)00891-1 %T Interface-related effects on confined excitons in GaAs/AlxGa1-xAs single quantum wells %V 190 %X Confined excitons in non-abrupt GaAs/AI(x)Ga(1-x)As single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning alpha with respect to the abrupt interface picture. Numerical results for confined (0, 0), (1 1) and (0, 2) excitons in GaAs/Al0.3Ga0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Angstrom and 2 ML wide interfaces. (C) 2002 Elsevier Science B.V. All rights reserved.

@article{WOS:000176520700034, abstract = {Confined excitons in non-abrupt GaAs/AI(x)Ga(1-x)As single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning alpha with respect to the abrupt interface picture. Numerical results for confined (0, 0), (1 1) and (0, 2) excitons in GaAs/Al0.3Ga0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Angstrom and 2 ML wide interfaces. (C) 2002 Elsevier Science B.V. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, author = {Ferreira, EC and da Costa, JAP and Freire, JAK and Farias, GA and Freire, VN}, biburl = {https://www.bibsonomy.org/bibtex/24f451283e7d8542a5474ab4bb272e7d7/ppgfis_ufc_br}, doi = {10.1016/S0169-4332(01)00891-1}, interhash = {8aecfeaa7385bb5c6dce5d516c3a1d1d}, intrahash = {4f451283e7d8542a5474ab4bb272e7d7}, issn = {0169-4332}, journal = {APPLIED SURFACE SCIENCE}, keywords = {binding effects} energy; exciton; interface well; {quantum}, note = {8th International Conference on the Formation of Semiconductor Interfaces (ICFSI-8), HOKKAIDO UNIV, SAPPORO, JAPAN, JUN 10-15, 2001}, number = {1-4}, organization = {Japan Soc Appl Phys; Hokkaido Univ, Res Ctr Integrated Quantum Electr; Int Sci Exchange Program Minist Educ, Culture, Sports, Sci & Technol Japan}, pages = {191-194}, publisher = {ELSEVIER SCIENCE BV}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Interface-related effects on confined excitons in GaAs/AlxGa1-xAs single quantum wells}, tppubtype = {article}, volume = 190, year = 2002 }