%0 Conference Paper %1 WOS:000229036500053 %A Freire, VN %A de Sousa, JS %B Quantum Sensing and Nanophotonic Devices II %C 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA %D 2005 %E Brown, M Razeghi and GJ %I SPIE-INT SOC OPTICAL ENGINEERING %K dielectrics; dots; electron high-k single tunneling} {quantum %P 547-555 %R 10.1117/12.588362 %T The impact of high-k dielectrics in nanocrystal flash memories %V 5732 %X The consequences of the use of high-k dielectrics in nanocrystal based non-volatile flash memories focusing on the electrical and electronic properties are investigated through computational simulations. In the light of these results, we discuss several aspects which must be addressed for the design of such devices. We focus on nanocrystals flash memories with HfO2 and SiO2 for analysis. Due to significant reductions of the the single-electron tunneling time and improvements on the data retention, high-k dielectrics offers important improvements for the non-volatile flash memories technology.

@inproceedings{WOS:000229036500053, abstract = {The consequences of the use of high-k dielectrics in nanocrystal based non-volatile flash memories focusing on the electrical and electronic properties are investigated through computational simulations. In the light of these results, we discuss several aspects which must be addressed for the design of such devices. We focus on nanocrystals flash memories with HfO2 and SiO2 for analysis. Due to significant reductions of the the single-electron tunneling time and improvements on the data retention, high-k dielectrics offers important improvements for the non-volatile flash memories technology.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA}, author = {Freire, VN and de Sousa, JS}, biburl = {https://www.bibsonomy.org/bibtex/2bffad4da2fd0af50fea6057c5f28217f/ppgfis_ufc_br}, booktitle = {Quantum Sensing and Nanophotonic Devices II}, doi = {10.1117/12.588362}, editor = {Brown, M {Razeghi and GJ}}, interhash = {5ce8d32bfd61c413658a491a2f2dc90d}, intrahash = {bffad4da2fd0af50fea6057c5f28217f}, issn = {0277-786X}, keywords = {dielectrics; dots; electron high-k single tunneling} {quantum}, note = {Conference on Quantum Sensing and Nanophotonic Devices II, San Jose, CA, JAN 23-27, 2005}, organization = {SPIE}, pages = {547-555}, publisher = {SPIE-INT SOC OPTICAL ENGINEERING}, pubstate = {published}, series = {PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {The impact of high-k dielectrics in nanocrystal flash memories}, tppubtype = {inproceedings}, volume = 5732, year = 2005 }