%0 Journal Article %1 WOS:000080318900011 %A Wang, H %A Farias, GA %A Freire, VN %C THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND %D 1999 %I PERGAMON-ELSEVIER SCIENCE LTD %J SOLID STATE COMMUNICATIONS %K and electronic interfaces; quantum states} surfaces wells; {nanostructures; %N 10 %P 587-592 %R 10.1016/S0038-1098(99)00112-X %T Graded interface effects on the carriers confinement in single GaN/AlxGa1-xN wurtzite quantum wells %V 110 %X In this article, we present a theoretical study of graded interface effects on the carriers (electron and heavy-hole) confinement properties in single GaN/AlxGa1-xN quantum wells. The smooth interfaces are described assuming error function-like patterns for the interfacial aluminum molar fraction variations, from which the carriers confinement potential and effective masses are obtained. We show the occurrence of graded interface-related blue shifts on the carriers confinement energies and intersubband transitions, whose strength depends on the GaN/AlxGa1-xN quantum well and graded interface widths. The highest intersubband transitions, which can occur within the commonly used square quantum well picture, are eliminated when the existence of smooth interfaces is taken into account. (C) 1999 Elsevier Science Ltd. All rights reserved.

@article{WOS:000080318900011, abstract = {In this article, we present a theoretical study of graded interface effects on the carriers (electron and heavy-hole) confinement properties in single GaN/AlxGa1-xN quantum wells. The smooth interfaces are described assuming error function-like patterns for the interfacial aluminum molar fraction variations, from which the carriers confinement potential and effective masses are obtained. We show the occurrence of graded interface-related blue shifts on the carriers confinement energies and intersubband transitions, whose strength depends on the GaN/AlxGa1-xN quantum well and graded interface widths. The highest intersubband transitions, which can occur within the commonly used square quantum well picture, are eliminated when the existence of smooth interfaces is taken into account. (C) 1999 Elsevier Science Ltd. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND}, author = {Wang, H and Farias, GA and Freire, VN}, biburl = {https://www.bibsonomy.org/bibtex/2571e9321dbf195f11e151a8311fa97ed/ppgfis_ufc_br}, doi = {10.1016/S0038-1098(99)00112-X}, interhash = {52a38bedc24e0888066c3bb467ed8148}, intrahash = {571e9321dbf195f11e151a8311fa97ed}, issn = {0038-1098}, journal = {SOLID STATE COMMUNICATIONS}, keywords = {and electronic interfaces; quantum states} surfaces wells; {nanostructures;}, number = 10, pages = {587-592}, publisher = {PERGAMON-ELSEVIER SCIENCE LTD}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Graded interface effects on the carriers confinement in single GaN/AlxGa1-xN wurtzite quantum wells}, tppubtype = {article}, volume = 110, year = 1999 }