The effect of interfaces in several InGaAs/GaAs SLs with In content x =
0.3 and 1, were studied. Interface thickness of 0, 1, 2 and 3 MLs wore considered. The Raman spectra for x = 0.3 evolves from a two peaks
feature to a single peak with increasing the interface thickness. The x = 1 SLs Raman spectra change considerably by interfacing. Two weak
features in the abrupt SL are observed to enhanced as the interface
thickness is increased from one to three monolayers. The atomic
displacements calculation reveals that most of the Raman modes of the
InGaAs/GaAs or the InAs/GaAs SLs are extended or quasi-extended modes
the case of interfaces with thickness of 3 MLs. (C) 2002 Elsevier
Science B.V. All rights reserved.
%0 Journal Article
%1 WOS:000182700700095
%A Lemos, V
%A Barros, EB
%A Freire, VN
%A Goncalves, JR
%A Mendes, J
%C RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS
%D 2003
%I ELSEVIER
%J PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
%K Raman dynamics; effects} interface scattering; {lattice
%N 1-4
%P 266-269
%R 10.1016/S1386-9477(02)00793-2
%T Lattice dynamic properties of interfaced InAs/GaAs superlattices
%V 17
%X The effect of interfaces in several InGaAs/GaAs SLs with In content x =
0.3 and 1, were studied. Interface thickness of 0, 1, 2 and 3 MLs wore considered. The Raman spectra for x = 0.3 evolves from a two peaks
feature to a single peak with increasing the interface thickness. The x = 1 SLs Raman spectra change considerably by interfacing. Two weak
features in the abrupt SL are observed to enhanced as the interface
thickness is increased from one to three monolayers. The atomic
displacements calculation reveals that most of the Raman modes of the
InGaAs/GaAs or the InAs/GaAs SLs are extended or quasi-extended modes
the case of interfaces with thickness of 3 MLs. (C) 2002 Elsevier
Science B.V. All rights reserved.
@article{WOS:000182700700095,
abstract = {The effect of interfaces in several InGaAs/GaAs SLs with In content x =
0.3 and 1, were studied. Interface thickness of 0, 1, 2 and 3 MLs wore considered. The Raman spectra for x = 0.3 evolves from a two peaks
feature to a single peak with increasing the interface thickness. The x = 1 SLs Raman spectra change considerably by interfacing. Two weak
features in the abrupt SL are observed to enhanced as the interface
thickness is increased from one to three monolayers. The atomic
displacements calculation reveals that most of the Raman modes of the
InGaAs/GaAs or the InAs/GaAs SLs are extended or quasi-extended modes
the case of interfaces with thickness of 3 MLs. (C) 2002 Elsevier
Science B.V. All rights reserved.},
added-at = {2022-05-23T20:00:14.000+0200},
address = {RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS},
author = {Lemos, V and Barros, EB and Freire, VN and Goncalves, JR and Mendes, J},
biburl = {https://www.bibsonomy.org/bibtex/296f5dc7377422251468d15f8118c6707/ppgfis_ufc_br},
doi = {10.1016/S1386-9477(02)00793-2},
interhash = {36464c4edbd449e1f2861f610e9ce115},
intrahash = {96f5dc7377422251468d15f8118c6707},
issn = {1386-9477},
journal = {PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES},
keywords = {Raman dynamics; effects} interface scattering; {lattice},
note = {International Conference on Superlattices Nano-Structures and
Nano-Devices (ICSNN-02), TOULOUSE, FRANCE, JUL 22-26, 2002},
number = {1-4},
pages = {266-269},
publisher = {ELSEVIER},
pubstate = {published},
timestamp = {2022-05-23T20:00:14.000+0200},
title = {Lattice dynamic properties of interfaced InAs/GaAs superlattices},
tppubtype = {article},
volume = 17,
year = 2003
}