To investigate the role of the interface state on the physical
properties of Schottky contacts, Co/n-Ge Schottky diodes that have
undergone various cleaning methods (HF etching and in situ thermal
cleaning) were studied by transmission electron microscopy, deep-level
transient spectroscopy and by a detailed analysis of the temperature
dependence of the characteristics of the diodes. It is shown that
Schottky barrier height characteristics are sensitive to the nature of
the interface. The strongest Fermi level (FL) pinning and the highest
spatial inhomogeneities are observed for intimate metal/semiconductor
contacts. The presence of a thin oxide interlayer, even of Ge native
oxide, allows the FL to be released towards the conduction band and
leads to more homogeneous contacts. Finally, our results suggest that a
pure GeO(2) oxide interlayer should present a better depinning
efficiency than the native Ge oxide.
%0 Journal Article
%1 ISI:000288208300005
%A Lajaunie, L.
%A David, M. L.
%A Barbot, J. F.
%D 2011
%E LTD, IOP Publishing
%J JOURNAL OF PHYSICS D-APPLIED PHYSICS
%K myown
%N 12
%R 10.1088/0022-3727/44/12/125103
%T Physical properties of Co/n-Ge Schottky contacts
%V 44
%X To investigate the role of the interface state on the physical
properties of Schottky contacts, Co/n-Ge Schottky diodes that have
undergone various cleaning methods (HF etching and in situ thermal
cleaning) were studied by transmission electron microscopy, deep-level
transient spectroscopy and by a detailed analysis of the temperature
dependence of the characteristics of the diodes. It is shown that
Schottky barrier height characteristics are sensitive to the nature of
the interface. The strongest Fermi level (FL) pinning and the highest
spatial inhomogeneities are observed for intimate metal/semiconductor
contacts. The presence of a thin oxide interlayer, even of Ge native
oxide, allows the FL to be released towards the conduction band and
leads to more homogeneous contacts. Finally, our results suggest that a
pure GeO(2) oxide interlayer should present a better depinning
efficiency than the native Ge oxide.
@article{ISI:000288208300005,
abstract = {{To investigate the role of the interface state on the physical
properties of Schottky contacts, Co/n-Ge Schottky diodes that have
undergone various cleaning methods (HF etching and in situ thermal
cleaning) were studied by transmission electron microscopy, deep-level
transient spectroscopy and by a detailed analysis of the temperature
dependence of the characteristics of the diodes. It is shown that
Schottky barrier height characteristics are sensitive to the nature of
the interface. The strongest Fermi level (FL) pinning and the highest
spatial inhomogeneities are observed for intimate metal/semiconductor
contacts. The presence of a thin oxide interlayer, even of Ge native
oxide, allows the FL to be released towards the conduction band and
leads to more homogeneous contacts. Finally, our results suggest that a
pure GeO(2) oxide interlayer should present a better depinning
efficiency than the native Ge oxide.}},
added-at = {2012-09-20T13:00:49.000+0200},
article-number = {{125103}},
author = {Lajaunie, L. and David, M. L. and Barbot, J. F.},
biburl = {https://www.bibsonomy.org/bibtex/294a74b5934cdbcb66f66f35917da40ff/llajau},
doi = {{10.1088/0022-3727/44/12/125103}},
editor = {LTD, IOP Publishing},
interhash = {527e33084d6cd607167d74da534c32c0},
intrahash = {94a74b5934cdbcb66f66f35917da40ff},
issn = {{0022-3727}},
journal = {{JOURNAL OF PHYSICS D-APPLIED PHYSICS}},
keywords = {myown},
month = {{MAR 30}},
number = {{12}},
timestamp = {2012-09-20T13:00:49.000+0200},
title = {{Physical properties of Co/n-Ge Schottky contacts}},
unique-id = {{ISI:000288208300005}},
volume = {{44}},
year = {{2011}}
}