In this article, we present a theoretical study of graded interface
effects on the carriers (electron and heavy-hole) confinement properties
in single GaN/AlxGa1-xN quantum wells. The smooth interfaces are
described assuming error function-like patterns for the interfacial
aluminum molar fraction variations, from which the carriers confinement
potential and effective masses are obtained. We show the occurrence of
graded interface-related blue shifts on the carriers confinement
energies and intersubband transitions, whose strength depends on the
GaN/AlxGa1-xN quantum well and graded interface widths. The highest
intersubband transitions, which can occur within the commonly used
square quantum well picture, are eliminated when the existence of smooth
interfaces is taken into account. (C) 1999 Elsevier Science Ltd. All
rights reserved.
%0 Journal Article
%1 WOS:000080318900011
%A Wang, H
%A Farias, GA
%A Freire, VN
%C THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND
%D 1999
%I PERGAMON-ELSEVIER SCIENCE LTD
%J SOLID STATE COMMUNICATIONS
%K and electronic interfaces; quantum states} surfaces wells; {nanostructures;
%N 10
%P 587-592
%R 10.1016/S0038-1098(99)00112-X
%T Graded interface effects on the carriers confinement in single
GaN/AlxGa1-xN wurtzite quantum wells
%V 110
%X In this article, we present a theoretical study of graded interface
effects on the carriers (electron and heavy-hole) confinement properties
in single GaN/AlxGa1-xN quantum wells. The smooth interfaces are
described assuming error function-like patterns for the interfacial
aluminum molar fraction variations, from which the carriers confinement
potential and effective masses are obtained. We show the occurrence of
graded interface-related blue shifts on the carriers confinement
energies and intersubband transitions, whose strength depends on the
GaN/AlxGa1-xN quantum well and graded interface widths. The highest
intersubband transitions, which can occur within the commonly used
square quantum well picture, are eliminated when the existence of smooth
interfaces is taken into account. (C) 1999 Elsevier Science Ltd. All
rights reserved.
@article{WOS:000080318900011,
abstract = {In this article, we present a theoretical study of graded interface
effects on the carriers (electron and heavy-hole) confinement properties
in single GaN/AlxGa1-xN quantum wells. The smooth interfaces are
described assuming error function-like patterns for the interfacial
aluminum molar fraction variations, from which the carriers confinement
potential and effective masses are obtained. We show the occurrence of
graded interface-related blue shifts on the carriers confinement
energies and intersubband transitions, whose strength depends on the
GaN/AlxGa1-xN quantum well and graded interface widths. The highest
intersubband transitions, which can occur within the commonly used
square quantum well picture, are eliminated when the existence of smooth
interfaces is taken into account. (C) 1999 Elsevier Science Ltd. All
rights reserved.},
added-at = {2022-05-23T20:00:14.000+0200},
address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND},
author = {Wang, H and Farias, GA and Freire, VN},
biburl = {https://www.bibsonomy.org/bibtex/2571e9321dbf195f11e151a8311fa97ed/ppgfis_ufc_br},
doi = {10.1016/S0038-1098(99)00112-X},
interhash = {52a38bedc24e0888066c3bb467ed8148},
intrahash = {571e9321dbf195f11e151a8311fa97ed},
issn = {0038-1098},
journal = {SOLID STATE COMMUNICATIONS},
keywords = {and electronic interfaces; quantum states} surfaces wells; {nanostructures;},
number = 10,
pages = {587-592},
publisher = {PERGAMON-ELSEVIER SCIENCE LTD},
pubstate = {published},
timestamp = {2022-05-23T20:00:14.000+0200},
title = {Graded interface effects on the carriers confinement in single
GaN/AlxGa1-xN wurtzite quantum wells},
tppubtype = {article},
volume = 110,
year = 1999
}