It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors
in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or
radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions,
which include into their system). In this situation one can also obtain increasing of homogeneity
of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-junction.
Optimization of technological process with using inhomogeneity of heterostructure give us
possibility to manufacture the transistors as more compact.
%0 Journal Article
%1 noauthororeditor
%A Pankratov, E.L.
%A Bulaeva, E.A.
%D 2014
%J International Journal of Recent advances in Physics (IJRAP)
%K Decreasing Dimensions Field-effect Transistors heterotransistors of
%N 3
%P 16
%R 10.14810/ijrap.2014.3301
%T Optimization of Manufacture of Field-Effect Heterotransistors without P-N-Junctions to decrease their Dimensions
%U https://wireilla.com/physics/ijrap/papers/3314ijrap01.pdf
%V 3
%X It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors
in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or
radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions,
which include into their system). In this situation one can also obtain increasing of homogeneity
of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-junction.
Optimization of technological process with using inhomogeneity of heterostructure give us
possibility to manufacture the transistors as more compact.
@article{noauthororeditor,
abstract = {It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors
in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or
radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions,
which include into their system). In this situation one can also obtain increasing of homogeneity
of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-junction.
Optimization of technological process with using inhomogeneity of heterostructure give us
possibility to manufacture the transistors as more compact.},
added-at = {2018-11-20T11:34:18.000+0100},
author = {Pankratov, E.L. and Bulaeva, E.A.},
biburl = {https://www.bibsonomy.org/bibtex/22fa15207b1c82fca4c06ad771a50c8b6/johnkenadi1985},
doi = {10.14810/ijrap.2014.3301},
interhash = {12c1bffe6b2fb177d9d31249492bda14},
intrahash = {2fa15207b1c82fca4c06ad771a50c8b6},
issn = {2201-1056},
journal = {International Journal of Recent advances in Physics (IJRAP) },
keywords = {Decreasing Dimensions Field-effect Transistors heterotransistors of},
language = {English},
month = {August},
number = 3,
pages = 16,
timestamp = {2018-11-20T11:34:18.000+0100},
title = {Optimization of Manufacture of Field-Effect Heterotransistors without P-N-Junctions to decrease their Dimensions},
url = {https://wireilla.com/physics/ijrap/papers/3314ijrap01.pdf},
volume = 3,
year = 2014
}