%0 Journal Article %1 WOS:000075867000029 %A Lima, MCA %A Farias, GA %A Freire, VN %C RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS %D 1998 %I ELSEVIER %J MICROELECTRONIC ENGINEERING %K GaAs/AlxGa1-xAs barriers} double effects; heterostructures; interface properties; quantum triple wells {tunnelling %P 191-195 %R 10.1016/S0167-9317(98)00163-4 %T Interface effects on the resonant tunnelling in GaAs/AlxGa1-xAs double-quantum-well triple-barriers %V 43-4 %X Theoretical results concerning the transmission properties of graded GaAs/AlxGa1-xAs Double-Quantum-Well Triple-Barriers (DQW-TB) are presented. It is shown that the existence of nonabrupt interfaces shifts the tunnelling resonances toward low energies, and is responsible for a significant reduction in the splitting of the double resonant peaks. The electric field effects on the transmission properties of GaAs/AlxGa1-xAs DQW-TB also change when the existence of nonabrupt interfaces are considered. (C) 1998 Elsevier Science B.V. All rights reserved.

@article{WOS:000075867000029, abstract = {Theoretical results concerning the transmission properties of graded GaAs/AlxGa1-xAs Double-Quantum-Well Triple-Barriers (DQW-TB) are presented. It is shown that the existence of nonabrupt interfaces shifts the tunnelling resonances toward low energies, and is responsible for a significant reduction in the splitting of the double resonant peaks. The electric field effects on the transmission properties of GaAs/AlxGa1-xAs DQW-TB also change when the existence of nonabrupt interfaces are considered. (C) 1998 Elsevier Science B.V. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS}, author = {Lima, MCA and Farias, GA and Freire, VN}, biburl = {https://www.bibsonomy.org/bibtex/2655c392a973e3c29fbf51c204560217c/ppgfis_ufc_br}, doi = {10.1016/S0167-9317(98)00163-4}, interhash = {229d53851d75022f77bc11cfcb7165c0}, intrahash = {655c392a973e3c29fbf51c204560217c}, issn = {0167-9317}, journal = {MICROELECTRONIC ENGINEERING}, keywords = {GaAs/AlxGa1-xAs barriers} double effects; heterostructures; interface properties; quantum triple wells {tunnelling}, note = {2nd International Conference on Low Dimensional Structures and Devices, LISBON, PORTUGAL, MAY 19-21, 1997}, pages = {191-195}, publisher = {ELSEVIER}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Interface effects on the resonant tunnelling in GaAs/AlxGa1-xAs double-quantum-well triple-barriers}, tppubtype = {article}, volume = {43-4}, year = 1998 }