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ANALYSIS OF POSSIBILITY OF GROWTH OF SEVERAL EPITAXIAL LAYERS SIMULTANEOUSLY IN GAS PHASES FRAMEWORK ONE TECHNOLOGICAL PROCESS. ON POSSIBILITY TO CHANGE PROPERTIES OF EPITAXIAL LAYERS

, and . International Journal on Organic Electronics (IJOE), 6 (1): 12 (January 2017)
DOI: 10.5121/ijoe.2017.6101

Abstract

We analyzed nonlinear model with varying in space and time coefficients of growth of epitaxial layers from gas phase in a vertical reactor with account native convection. We formulate several conditions to increase homogeneity of epitaxial layers with varying of technological process parameters.

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