%0 Journal Article %1 noauthororeditor %A Beccard, Henrik %A Kirbus, Benjamin %A Beyreuther, Elke %A Rüsing, Michael %A Bednyakov, Petr %A Hlinka, Jiří %A Eng, Lukas M. %D 2022 %I American Chemical Society %J ACS Appl. Nano Mater. %K c %N 7 %P 8717-8722 %R 10.1021/acsanm.2c01919 %T Nanoscale conductive sheets in ferroelectric BaTiO$_3$: large Hall electron mobilities at head-to-head domain walls %U https://doi.org/10.1021/acsanm.2c01919 %V 5 %X Strongly charged head-to-head domain walls that are purposely engineered along the 110 crystallographic orientation into ferroelectric BaTiO3 single crystals have been proposed as intrinsically nanoscaled two-dimensional electron gases (2DEGs) because of their significant conductivity. Here, we quantify these 2DEG properties through dedicated Hall transport measurements in van der Pauw 4-point geometry, finding the electron mobility to reach around 400 cm2 (V s)−1, while the two-dimensional charge density amounts to 7 × 103 cm–2. We underline the necessity to take into account the thermal and geometrical misalignment offset voltages by evaluating the Hall resistance under magnetic field sweeps; otherwise, errors of several hundred percent in the derived transport parameters can occur

@article{noauthororeditor, abstract = {Strongly charged head-to-head domain walls that are purposely engineered along the [110] crystallographic orientation into ferroelectric BaTiO3 single crystals have been proposed as intrinsically nanoscaled two-dimensional electron gases (2DEGs) because of their significant conductivity. Here, we quantify these 2DEG properties through dedicated Hall transport measurements in van der Pauw 4-point geometry, finding the electron mobility to reach around 400 cm2 (V s)−1, while the two-dimensional charge density amounts to 7 × 103 cm–2. We underline the necessity to take into account the thermal and geometrical misalignment offset voltages by evaluating the Hall resistance under magnetic field sweeps; otherwise, errors of several hundred percent in the derived transport parameters can occur}, added-at = {2023-04-18T20:36:15.000+0200}, author = {Beccard, Henrik and Kirbus, Benjamin and Beyreuther, Elke and Rüsing, Michael and Bednyakov, Petr and Hlinka, Jiří and Eng, Lukas M.}, biburl = {https://www.bibsonomy.org/bibtex/2f48d56242f710c998a37924da9dfb76f/ctqmat}, day = 11, description = {Nanoscale conductive sheets in ferroelectric BaTiO3: large hall electron mobilities at head-to-head domain walls }, doi = {10.1021/acsanm.2c01919}, interhash = {793157249abe24ad36da32e3a4599433}, intrahash = {f48d56242f710c998a37924da9dfb76f}, journal = {ACS Appl. Nano Mater.}, keywords = {c}, month = {07}, number = 7, pages = {8717-8722}, publisher = {American Chemical Society}, timestamp = {2023-10-18T14:04:00.000+0200}, title = {Nanoscale conductive sheets in ferroelectric BaTiO$_{\mathbf{3}}$: large Hall electron mobilities at head-to-head domain walls}, url = {https://doi.org/10.1021/acsanm.2c01919}, volume = 5, year = 2022 }