%0 Journal Article %1 WOS:000229666000051 %A Bezerra, MG %A Freire, JAK %A Freire, VN %A Farias, GA %A Lima, FMS %A Fonseca, ALA %A Nunes, OAC %C THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND %D 2005 %I ELSEVIER SCI LTD %J MICROELECTRONICS JOURNAL %K fluctuation; interface quantum superlattice} well; {modulation-doped; %N 3-6 %P 359-361 %R 10.1016/j.mejo.2005.02.057 %T Interface effects in modulation-doped GaAs/AlGaAs single quantum wells and superlattices %V 36 %X We investigate how the existence of interface graduation can modify the electronic properties in n and p-type modulation-doped GaAs/AlxGa1-x As single quantum wells (QWs) and superlattices. The system requires a self-consistent solution of Poisson and Schrodinger equations. Our results show that the existence of graded interfaces modifies carrier (electrons and holes) confinement inside of the GaAs quantum well, affecting the energy levels. (c) 2005 Elsevier Ltd. All rights reserved.

@article{WOS:000229666000051, abstract = {We investigate how the existence of interface graduation can modify the electronic properties in n and p-type modulation-doped GaAs/AlxGa1-x As single quantum wells (QWs) and superlattices. The system requires a self-consistent solution of Poisson and Schrodinger equations. Our results show that the existence of graded interfaces modifies carrier (electrons and holes) confinement inside of the GaAs quantum well, affecting the energy levels. (c) 2005 Elsevier Ltd. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND}, author = {Bezerra, MG and Freire, JAK and Freire, VN and Farias, GA and Lima, FMS and Fonseca, ALA and Nunes, OAC}, biburl = {https://www.bibsonomy.org/bibtex/2140761dffd1c379c765d66f06e1fbae3/ppgfis_ufc_br}, doi = {10.1016/j.mejo.2005.02.057}, interhash = {0d9c7e51ca48166d6662b9c4243d75a4}, intrahash = {140761dffd1c379c765d66f06e1fbae3}, issn = {0026-2692}, journal = {MICROELECTRONICS JOURNAL}, keywords = {fluctuation; interface quantum superlattice} well; {modulation-doped;}, note = {5th International Conference on Low Dimensional Structures and Devices (LDSD 2004), Cancun, MEXICO, DEC 12-17, 2004}, number = {3-6}, organization = {CINVESTAV; CLAF; USAF Off Sci Res; USAF Res Lab; European Off Aerosp Res & Dev}, pages = {359-361}, publisher = {ELSEVIER SCI LTD}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Interface effects in modulation-doped GaAs/AlGaAs single quantum wells and superlattices}, tppubtype = {article}, volume = 36, year = 2005 }