Article,

Theory of exciton-polariton in GaN thin films

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SOLID STATE COMMUNICATIONS, 124 (3): 109-112 (2002)
DOI: 10.1016/S0038-1098(02)00488-X

Abstract

In this work we study exciton-polariton modes confined in wurtzite GaN thin films on sapphire substrates. Using standard electromagnetic boundary conditions, together with the exciton additional boundary condition, the exciton-polariton dispersion relation is then obtained, in both s and p-polarization, by solving a secular determinant. Our results show that the exciton quantized energies lie outside the bulk modes, with mixed surface and guided modes. (C) 2002 Elsevier Science Ltd. All rights reserved.

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