In this paper we introduce an approach to optimize technological process of manufacturing of heterotransistors with two sources to decrease their dimensions. Framework the approach we consider a heterostructure with specific configuration. After manufacturing of the heterostructure we consider doping of several areas of the heterostructure by diffusion or ion implantation. The doping was finished by optimized annealing of dopant and/or radiation defects. We introduce an analytical approach for prognosis of mass transport to obtain the required results.
%0 Journal Article
%1 noauthororeditor
%A E.L, Pankratov
%D 2017
%J International Journal on Organic Electronics (IJOE)
%K Heterotransistor analytical approach for mass of optimization process prognosis sources technological transport two with
%N 3
%P 11
%R 10.5121/ijoe.2017.6301
%T ON APPROACH TO OPTIMIZE MANUFACTURING OF A TRANSISTORS WITH TWO SOURCES TO DECREASE THEIR DIMENSIONS
%U http://airccse.org/journal/IJOE/papers/6317ijoe01.pdf
%V 6
%X In this paper we introduce an approach to optimize technological process of manufacturing of heterotransistors with two sources to decrease their dimensions. Framework the approach we consider a heterostructure with specific configuration. After manufacturing of the heterostructure we consider doping of several areas of the heterostructure by diffusion or ion implantation. The doping was finished by optimized annealing of dopant and/or radiation defects. We introduce an analytical approach for prognosis of mass transport to obtain the required results.
@article{noauthororeditor,
abstract = {In this paper we introduce an approach to optimize technological process of manufacturing of heterotransistors with two sources to decrease their dimensions. Framework the approach we consider a heterostructure with specific configuration. After manufacturing of the heterostructure we consider doping of several areas of the heterostructure by diffusion or ion implantation. The doping was finished by optimized annealing of dopant and/or radiation defects. We introduce an analytical approach for prognosis of mass transport to obtain the required results. },
added-at = {2018-02-02T13:03:05.000+0100},
author = {E.L, Pankratov},
biburl = {https://www.bibsonomy.org/bibtex/283100293da8df87d727037bfb6479363/ijoe_journal},
doi = {10.5121/ijoe.2017.6301},
interhash = {fdc30b5d364b5d9f03ddb1c6dd2bf4d4},
intrahash = {83100293da8df87d727037bfb6479363},
journal = {International Journal on Organic Electronics (IJOE) },
keywords = {Heterotransistor analytical approach for mass of optimization process prognosis sources technological transport two with},
month = {July},
number = 3,
pages = 11,
timestamp = {2018-02-02T13:03:05.000+0100},
title = {ON APPROACH TO OPTIMIZE MANUFACTURING OF A TRANSISTORS WITH TWO SOURCES TO DECREASE THEIR DIMENSIONS},
url = {http://airccse.org/journal/IJOE/papers/6317ijoe01.pdf},
volume = 6,
year = 2017
}