In this work we study exciton-polariton modes confined in wurtzite GaN
thin films on sapphire substrates. Using standard electromagnetic
boundary conditions, together with the exciton additional boundary
condition, the exciton-polariton dispersion relation is then obtained,
in both s and p-polarization, by solving a secular determinant. Our
results show that the exciton quantized energies lie outside the bulk
modes, with mixed surface and guided modes. (C) 2002 Elsevier Science
Ltd. All rights reserved.
%0 Journal Article
%1 WOS:000178695000008
%A Vasconcelos, MS
%A Albuquerque, EL
%A Farias, GA
%A Freire, VN
%C THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND
%D 2002
%I PERGAMON-ELSEVIER SCIENCE LTD
%J SOLID STATE COMMUNICATIONS
%K films; optical properties} thin {semiconductors;
%N 3
%P 109-112
%R 10.1016/S0038-1098(02)00488-X
%T Theory of exciton-polariton in GaN thin films
%V 124
%X In this work we study exciton-polariton modes confined in wurtzite GaN
thin films on sapphire substrates. Using standard electromagnetic
boundary conditions, together with the exciton additional boundary
condition, the exciton-polariton dispersion relation is then obtained,
in both s and p-polarization, by solving a secular determinant. Our
results show that the exciton quantized energies lie outside the bulk
modes, with mixed surface and guided modes. (C) 2002 Elsevier Science
Ltd. All rights reserved.
@article{WOS:000178695000008,
abstract = {In this work we study exciton-polariton modes confined in wurtzite GaN
thin films on sapphire substrates. Using standard electromagnetic
boundary conditions, together with the exciton additional boundary
condition, the exciton-polariton dispersion relation is then obtained,
in both s and p-polarization, by solving a secular determinant. Our
results show that the exciton quantized energies lie outside the bulk
modes, with mixed surface and guided modes. (C) 2002 Elsevier Science
Ltd. All rights reserved.},
added-at = {2022-05-23T20:00:14.000+0200},
address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND},
author = {Vasconcelos, MS and Albuquerque, EL and Farias, GA and Freire, VN},
biburl = {https://www.bibsonomy.org/bibtex/25ec637c7df330e8c90d1298d5fc065da/ppgfis_ufc_br},
doi = {10.1016/S0038-1098(02)00488-X},
interhash = {c581353b35e8978a4b514fa6fa389f87},
intrahash = {5ec637c7df330e8c90d1298d5fc065da},
issn = {0038-1098},
journal = {SOLID STATE COMMUNICATIONS},
keywords = {films; optical properties} thin {semiconductors;},
number = 3,
pages = {109-112},
publisher = {PERGAMON-ELSEVIER SCIENCE LTD},
pubstate = {published},
timestamp = {2022-05-23T20:00:14.000+0200},
title = {Theory of exciton-polariton in GaN thin films},
tppubtype = {article},
volume = 124,
year = 2002
}