Abstract
The ability to control the size of the electronic bandgap is an integral
part of solid-state technology. Atomically thin two-dimensional crystals
offer a new approach for tuning the energies of the electronic states
based on the unusual strength of the Coulomb interaction in these
materials and its environmental sensitivity. Here, we show that by
engineering the surrounding dielectric environment, one can tune the
electronic bandgap and the exciton binding energy in monolayers of WS2
and WSe2 by hundreds of meV. We exploit this behaviour to present an
in-plane dielectric heterostructure with a spatially dependent bandgap,
as an initial step towards the creation of diverse lateral junctions
with nanoscale resolution.
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